Hall measurements of n-indium arsenide MBE-deposited layers: Relevance to device processing and applications
Identifieur interne : 000116 ( Main/Repository ); précédent : 000115; suivant : 000117Hall measurements of n-indium arsenide MBE-deposited layers: Relevance to device processing and applications
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Abstract
This paper addresses the observed difference between the measured and theoretically computed concentration, resistivity and mobility for an n-InAs sample. This difference is a problem for measurements made during InAs device processing. The current literature does not provide a sufficient explanation of the problem, which appears only at temperatures lower than ˜ 100 K. Nevertheless, it limits the use of semiconductor devices in new applications. We have previously suggested that the responsibility for such behavior may lie with an element, which functions as a donor at low temperatures and as an acceptor at higher temperatures. Another problem arises from using Hall potential measurements to obtain the concentration, mobility and resistivity of intentionally undoped n-InAs MBE layers. The experimental data show a dependence of the obtained results on the magnetic field strength. The experimental data agree with the computational values only at 0.6 T in the range of ˜ 100-300 K. The purpose of this paper is to show how to obtain proper results for the conduction parameters of InAs using Hall voltage measurements.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Hall measurements of n-indium arsenide MBE-deposited layers: Relevance to device processing and applications</title><author><name sortKey="Wolkenberg, Andrzej" uniqKey="Wolkenberg A">Andrzej Wolkenberg</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Electron Technology</s1><s2>Warsaw</s2><s3>POL</s3><sZ>1 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>Institute of Electron Technology</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Materials Engineering, Czestochowa University of Technology</s1><s3>POL</s3><sZ>1 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>Institute of Materials Engineering, Czestochowa University of Technology</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0046481</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0046481 INIST</idno><idno type="RBID">Pascal:14-0046481</idno><idno type="wicri:Area/Main/Corpus">000172</idno><idno type="wicri:Area/Main/Repository">000116</idno></publicationStmt><seriesStmt><idno type="ISSN">1369-8001</idno><title level="j" type="abbreviated">Mater. sci. semicond. process.</title><title level="j" type="main">Materials science in semiconductor processing</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Acceptor center</term><term>Donor center</term><term>Electrical conductivity</term><term>Hall effect</term><term>Indium arsenides</term><term>Low temperature</term><term>Magnetic field effects</term><term>Magnetic fields</term><term>Material processing</term><term>Microelectronic fabrication</term><term>Molecular beam epitaxy</term><term>Semiconductor devices</term><term>Voltage measurement</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet Hall</term><term>Epitaxie jet moléculaire</term><term>Traitement matériau</term><term>Conductivité électrique</term><term>Dispositif semiconducteur</term><term>Centre donneur</term><term>Basse température</term><term>Centre accepteur</term><term>Champ magnétique</term><term>Effet champ magnétique</term><term>Mesure tension électrique</term><term>Arséniure d'indium</term><term>Fabrication microélectronique</term><term>7363</term><term>8540H</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This paper addresses the observed difference between the measured and theoretically computed concentration, resistivity and mobility for an n-InAs sample. This difference is a problem for measurements made during InAs device processing. The current literature does not provide a sufficient explanation of the problem, which appears only at temperatures lower than ˜<sub> </sub>100 K. Nevertheless, it limits the use of semiconductor devices in new applications. We have previously suggested that the responsibility for such behavior may lie with an element, which functions as a donor at low temperatures and as an acceptor at higher temperatures. Another problem arises from using Hall potential measurements to obtain the concentration, mobility and resistivity of intentionally undoped n-InAs MBE layers. The experimental data show a dependence of the obtained results on the magnetic field strength. The experimental data agree with the computational values only at 0.6 T in the range of ˜ 100-300 K. The purpose of this paper is to show how to obtain proper results for the conduction parameters of InAs using Hall voltage measurements.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1369-8001</s0></fA01><fA03 i2="1"><s0>Mater. sci. semicond. process.</s0></fA03><fA05><s2>18</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Hall measurements of n-indium arsenide MBE-deposited layers: Relevance to device processing and applications</s1></fA08><fA11 i1="01" i2="1"><s1>WOLKENBERG (Andrzej)</s1></fA11><fA14 i1="01"><s1>Institute of Electron Technology</s1><s2>Warsaw</s2><s3>POL</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Materials Engineering, Czestochowa University of Technology</s1><s3>POL</s3><sZ>1 aut.</sZ></fA14><fA20><s1>165-170</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>2888A</s2><s5>354000505701190250</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>18 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0046481</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Materials science in semiconductor processing</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>This paper addresses the observed difference between the measured and theoretically computed concentration, resistivity and mobility for an n-InAs sample. This difference is a problem for measurements made during InAs device processing. The current literature does not provide a sufficient explanation of the problem, which appears only at temperatures lower than ˜<sub> </sub>100 K. Nevertheless, it limits the use of semiconductor devices in new applications. We have previously suggested that the responsibility for such behavior may lie with an element, which functions as a donor at low temperatures and as an acceptor at higher temperatures. Another problem arises from using Hall potential measurements to obtain the concentration, mobility and resistivity of intentionally undoped n-InAs MBE layers. The experimental data show a dependence of the obtained results on the magnetic field strength. The experimental data agree with the computational values only at 0.6 T in the range of ˜ 100-300 K. 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